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IS64WV51216BLL |
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| Part Number | IS64WV51216BLL |
| Manufacturer | Integrated Silicon Solution |
| Description | The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-perform- ance CMOS technology. This highly reli... |
| Features |
• High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE op- tions • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.3V + 5% • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial and Automot... |
| Document |
 IS64WV51216BLL Data Sheet
PDF 199.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ISSI |
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM |
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ISSI |
512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC |
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ISSI |
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
1M x 8 HIGH-SPEED CMOS STATIC RAM |
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ISSI |
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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