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FDFME3N311ZT |
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| Part Number | FDFME3N311ZT |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated com... |
| Features |
General Description
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low ... |
| Document |
 FDFME3N311ZT Data Sheet
PDF 285.81KB |
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