Document | DataSheet (129.29KB) |
The D10040230PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN pHEMT die has high output capability, and is operated from 45MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features .
+VB
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
INPUT
OUTPUT
Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 22.5dB Min. Gain at 1GHz 380mA Max. at 24VDC 45MHz to 1000MHz CATV Amplifier Systems
Applications
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Parameter Overall
Power Gain Slope [1] Flatness of Frequency Response Input Return Loss
Min.
21.0 22.5 1.0.
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PREMIER DEVICES |
Hybrid Power Doubler amplifier module |
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PDI |
Product Specification |
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PDI |
GaAs Power Doubler |
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RF Micro Devices |
45-1000MHz GaAs/GaN PWR DBLR HYBRID |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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Seme LAB |
METAL GATE RF SILICON FET |
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