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2SK3481
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2SK3481 SWITCHING N-CHANNEL POWER MOSFET

Document Datasheet DataSheet (101.97KB)

2SK3481 SWITCHING N-CHANNEL POWER MOSFET

The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3481 2SK3481-S 2SK3481-ZJ 2SK3481-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, I.

Features


• Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 2300 pF TYP.
• Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage Drain Current (pulse) (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±30 ±60 56 1.5 150
  –55 to +150 26 68 V V A A W W °C °C A mJ (TO-263, TO-220SMD) (TO-262) Total Power Dissipation (TC = 25°C.

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