FDS4435BZ |
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| Part Number | FDS4435BZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Po... |
| Features |
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on) High power and current handling capability
Termination is Lead-free and RoHS compliant
April 2009
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Managem... |
| Document |
 FDS4435BZ Data Sheet
PDF 249.64KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ON Semiconductor |
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ON Semiconductor |
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