LET9130 |
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Part Number | LET9130 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET91... |
Features |
70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65
2 3 1. Drain 2. Source 3. Gate
Unit V V A W °C °C
-0.5 to +15 15 217 200 -65 to +200
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.6 °C/W
February, 6 2003
1/6
LET9130
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 3 A ID = 9 A VDD = 28 V VDS = 26 V f = 1 MHz f = 1 MHz 3 0.... |
Datasheet |
LET9130 Data Sheet
PDF 57.63KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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ST Microelectronics |
RF power transistor |
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ST Microelectronics |
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STMicroelectronics |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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ST Microelectronics |
RF power transistor |
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ST Microelectronics |
RF power transistor |
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|
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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