LET9002 |
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| Part Number | LET9002 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET... |
| Features |
DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 20 °C/W
April, 15 2003
1/4
LET9002
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1... |
| Document |
 LET9002 Data Sheet
PDF 40.75KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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STMicroelectronics |
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ST Microelectronics |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
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|
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|
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|
ST Microelectronics |
RF power transistor |
|
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|
ST Microelectronics |
RF power transistor |
|
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|
|
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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