www.DataSheet4U.com 3SK228 GaAs Dual Gate MES FET ADE-208-280 1st. Edition Application UHF TV tuner RF Amplifier Outline www.DataSheet4U.com 3SK228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power d.
10 µA, VG2S = VDS = 0 I G2 =
–10 µA, VG1S = VDS = 0 VG1S =
–5 V, VG2S = VDS = 0 VG2S =
–5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz VDS = 5 V, VG1S = VG2S =
–3 V, f = 1 MHz
Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “XR
–”. |yfs| Ciss Coss Crss PG NF
2
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3SK228
3
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Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor | |
2 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR | |
3 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR | |
4 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR | |
5 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |