STW80N06-10 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STW80N06-10 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

® STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW80N06-10 www.DataSheet4U.com s s s s s s s s V DSS 60 V R DS(on) < 0.010 Ω ID 80 A TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DAT.

Features

perating Junction Temperature o o Value 60 60 ± 20 80 60 320 180 1.2 5 -65 to 175 175 Unit V V V A A A W W/ o C V/ns o o C C (
•) Pulse width limited by safe operating area October 1998 1/5 STW80N06-10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.83 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IAR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m.