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600V 20A 0.220Ω APT20N60BCF APT20N60SCF APT20N60BCFG* APT20N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction FREDFET TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated www.DataS.
rom Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125°C) Avalanche Current 7 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 690 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 13A) 0.220 2.1 1700 ±100 3 4 5 Ohms µA nA Volts 5-2005 050-7235 Rev A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain.
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Advanced Power Technology |
Super Junction FREDFET |
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Advanced Power Technology |
Super Junction MOSFET |
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Advanced Power Technology |
Super Junction MOSFET |
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Advanced Power Technology |
Super Junction FREDFET |
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Advanced Power Technology |
Super Junction FREDFET |
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Advanced Power Technology |
Super Junction MOSFET |
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Microsemi Corporation |
Field Stop IGBT |
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Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
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Advanced Power Technology |
IGBT |
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Microsemi Corporation |
Thunderbolt IGBT |
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Microsemi Corporation |
Resonant Mode Combi IGBT |
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Microsemi Corporation |
Thunderbolt IGBT |
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Kingbright |
Infrared Emitting Diode |
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Kingbright Corporation |
Straight 1-Row BergStik II Headers |
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Kingbright |
PHOTOTRANSISTOR |
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