LMBT5550LT1 Transistor

LMBT5550LT1 Transistor

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device LMBT5550LT1 LMBT5550LT1G (Pb-Free) Marking M1F M1F G1 G1 Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel LMBT5550LT1 LMBT5551LT1 3 1 2 ww.

Features

stg ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector
  –Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter
  –Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) ( V CB = 120Vdc, I E = 0, T A=100 °C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Tes.