LMBT3946DW1T1 Datasheet

LMBT3946DW1T1 Transistors

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devi.

Features

0 -5.0 IC 200 -200 HBM>16000, MM>2000 Max 150 833
  –55 to +150 Vdc ORDERING INFORMATION Device Package Shipping mAdc LMBT3946DW1T1 SOT-363 3000Units/Reel ESD V THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25°C Thermal Resistance Junction Rθ JA to Ambient Junction and Storage Temperature Range TJ,Ts t g Unit mW °C/W °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. LMBT3946DW1T1 1/11 LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characte.