The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch.
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two
– one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one p.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 46V16M16 |
Micron Technology |
MT46V16M16 | |
2 | 46V32M16 |
Micron Technology |
MT46V32M16 | |
3 | 4600H |
Bourns Electronic Solutions |
Thick Film Conformal SIPs | |
4 | 4600M |
Bourns Electronic Solutions |
Thick Film Conformal SIPs | |
5 | 4600X |
Bourns Electronic Solutions |
Thick Film Conformal SIPs | |
6 | 4604 |
JW Miller |
RF Chokes | |
7 | 4604T |
Bourns |
Thin Film Conformal SIP | |
8 | 4604X-10x-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
9 | 4604X-Apx-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
10 | 4605X-10x-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
11 | 4605X-Apx-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
12 | 4606 |
Tuofeng Semiconductor |
Complementary High-Density MOSFET | |
13 | 4606X-10x-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
14 | 4606X-Apx-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs | |
15 | 4607X-10x-xxx |
Bourns |
(4600X Series) Thick Film Conformal SIPs |