CRF24010D |
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| Part Number | CRF24010D |
| Manufacturer | Cree |
| Description | PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to si... |
| Features |
APPLICATIONS
• • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 5 GHz Operation High Efficiency • • • • • • Wideband Military Communications Secure Comms for Homeland Defense Class A, AB Amplifiers TDMA, EDGE, CDMA and W-CDMA Broadband Amplifiers MMDS Packaging Information • • Bare die are shipped in Gel-Pak® containers. Non-adhesive tacky membrane immobilizes die during shipment. ly 2006 Rev 1.5 – Ju Subject to change without notice. www.cree.com/wireless Absolute Maximum Ratings (not simultaneous) at 25... |
| Datasheet |
 CRF24010D Data Sheet
PDF 1.01MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Cree |
SiC RF Power MESFET |
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Cree |
SiC RF Power MESFET |
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Cree |
SiC RF Power MESFET |
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Toshiba Semiconductor |
Power Supply Applications |
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Toshiba Semiconductor |
Switching Mode Power Supply Applications |
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Cystech Electonics |
Fast Recovery Rectifiers |
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Formosa MS |
Current Regulative Diode |
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CRYSTEK |
RF Source |
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CRYSTEK |
Phase Locked Clock Source |
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Teledyne |
Failsafe SPDT Coaxial Switch |
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