This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switc.
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RDS(on) (Max 0.45 Ω )@VGS=10V
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2. Drain
Gate Charge (Typical 29nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested www.DataSheet4U.com
■ Maximum Junction Temperature Range (150°C)
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1. Gate {
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3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | WFF630 |
Winsemi |
Silicon N-Channel MOSFET | |
2 | WFF640 |
Wisdom technologies |
N-Channel MOSFET | |
3 | WFF6N90 |
Wisdom technologies |
N-Channel MOSFET | |
4 | WFF |
Welwyn Components Limited |
Fast Fusible Metal Film Resistors | |
5 | WFF10N60 |
Wisdom technologies |
N-Channel MOSFET | |
6 | WFF10N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
7 | WFF10N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
8 | WFF10N65L |
Winsemi |
Silicon N-Channel MOSFET | |
9 | WFF1101 |
BOSCH |
(WFF1xx1) GB Directions for Use | |
10 | WFF1121 |
BOSCH |
(WFF1xx1) GB Directions for Use | |
11 | WFF1201 |
BOSCH |
(WFF1xx1) GB Directions for Use | |
12 | WFF12N60 |
Wisdom technologies |
N-Channel MOSFET | |
13 | WFF12N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
14 | WFF12N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
15 | WFF12N65L |
Winsemi |
Silicon N-Channel MOSFET |