MS3302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MS3302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Sym.

Features

• 3.0 GHz
• GOLD METALIZATION www.DataSheet4U.com
• EMITTER BALLASTED
• POUT = 4.5 W MINIMUM
• GP = 4.5 dB
• ∞ :1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION DESCRIPTION: The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0
  – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCC IC TJ T STG Parameter Power Dissipation Collector-Supply Voltage Device Current Junction Temper.