IRFP640 Power MOSFET

IRFP640 Power MOSFET

www.DataSheet4U.com Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at p.

Features

72 125 1.0 ±20 580 18 13 5.0
  –55 to +150 300(1.6mm from case) 10 Ibf
●in(1.1N
●m) Min. Typ. Max. Units A W W/ ْC V mJ A mJ V/ns ْC PD@TC=25ْC Power Dissipation Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient — — — — 0.50 — 1.0 — 62 ْC/W IRFP640 HEXFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter V(BR)DSS Drain-to-So.