BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin .
m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUC.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | BD242 |
INCHANGE |
PNP Transistor | |
2 | BD242 |
Fairchild Semiconductor |
PNP Transistor | |
3 | BD242 |
Micro Electronics |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS | |
4 | BD242 |
Bourns Electronic |
PNP SILICON POWER TRANSISTORS | |
5 | BD242 |
SavantIC |
Silicon PNP Power Transistors | |
6 | BD242 |
Comset Semiconductor |
PNP transistors | |
7 | BD2425N50ATI |
Anaren Microwave |
Ultra Low Profile 0404 Balun | |
8 | BD242A |
INCHANGE |
PNP Transistor | |
9 | BD242A |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
10 | BD242A |
Fairchild Semiconductor |
PNP Transistor | |
11 | BD242A |
Micro Electronics |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS | |
12 | BD242A |
Bourns Electronic |
PNP SILICON POWER TRANSISTORS | |
13 | BD242A |
SavantIC |
Silicon PNP Power Transistors | |
14 | BD242A |
Comset Semiconductor |
PNP transistors | |
15 | BD242B |
INCHANGE |
PNP Transistor |