VT3664164T 1M X 4 Banks X 16-Bit SDRAM

VT3664164T 1M X 4 Banks X 16-Bit SDRAM

The VT3664164T is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Using pipelined architecture technology. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed www.DataSheet4U.com at a burst length.

Features

■ 3.3V ± 0.3V power supply
■ 1,048,576 words x 4 banks x 16 bits organization
■ Four banks operation
■ Power-down Mode
■ Sequential and interleave burst
■ Burst Length: 1,2,4,8 and full page
■ CAS latency: 2 and 3
■ 4K refresh cycles/64 ms
■ Auto & self refresh
■ DQM for masking
■ Burst read single-bit write operation
■ LVTTL compatible with multiplexed address
■ All inputs are sample at the positive going edge of the system clock
■ Reflow temperature condition: Max 245℃~250℃
■ The environmental testing temperature： All type of VT SDRAM testing temperature at 75℃(Max). KRETON CORP. Page 1 V.