2SC2824 |
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Part Number | 2SC2824 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1 1 2SC2824 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Complementary to 2SA1184. • Suitable for driver of 60 to 80 watts audio amplifier. • ... |
Features |
• Complementary to 2SA1184. • Suitable for driver of 60 to 80 watts audio amplifier. • High breakdown voltage. Unit in mm 7. 9 MAX. ' 03.1 ±0.15 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Ti Storage Temperature Range : stg RATING 120 120 UNIT 100 mA 15 150 °C -55-150 °C 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE JEDEC TO-126 EIAJ TOSHIBA 2-8F1A Mounting Kit No. AC46C Weigh... |
Datasheet |
2SC2824 Data Sheet
PDF 111.76KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Mospec Semiconductor |
POWER TRANSISTORS |
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INCHANGE |
NPN Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Mitsubishi Electric |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Toshiba |
Silicon NPN Transistor |
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Toshiba |
Silicon NPN Transistor |
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Toshiba |
Silicon NPN Transistor |
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Rohm |
Epitaxial Planar NPN Silicon Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
NPN Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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