2SC2824 Toshiba Semiconductor Silicon NPN Epitaxial Type Transistor

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2SC2824

Toshiba Semiconductor
2SC2824
2SC2824 2SC2824
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Part Number 2SC2824
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1 1 2SC2824 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Complementary to 2SA1184. • Suitable for driver of 60 to 80 watts audio amplifier. • ...
Features
• Complementary to 2SA1184.
• Suitable for driver of 60 to 80 watts audio amplifier.
• High breakdown voltage. Unit in mm 7. 9 MAX. ' 03.1 ±0.15 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Ti Storage Temperature Range : stg RATING 120 120 UNIT 100 mA 15 150 °C -55-150 °C 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE JEDEC TO-126 EIAJ TOSHIBA 2-8F1A Mounting Kit No. AC46C Weigh...

Datasheet Datasheet 2SC2824 Data Sheet
PDF 111.76KB


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