TYPICAL PERFORMANCE CURVES ® APT35GN120L2DQ2 APT35GN120L2DQ2G* APT35GN120L2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate.
oltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT35GN120L2DQ2(G) UNIT Volts 1200 ±30 94 46 105 105A @ 1200V 379 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = .
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | APT35GN120L2DQ2 |
Advanced Power Technology |
IGBT | |
2 | APT35GN120B |
Advanced Power Technology |
IGBT | |
3 | APT35GN120BG |
Advanced Power Technology |
IGBT | |
4 | APT35GA90B |
Microsemi Corporation |
High Speed PT IGBT | |
5 | APT35GA90S |
Microsemi Corporation |
High Speed PT IGBT | |
6 | APT35GP120B |
Advanced Power Technology |
POWER MOS 7 IGBT | |
7 | APT35GP120B2DF2 |
Advanced Power Technology |
Power MOS 7 IGBT | |
8 | APT35GP120B2DQ2 |
Advanced Power Technology |
POWER MOS 7 IGBT | |
9 | APT35GP120B2DQ2G |
Advanced Power Technology |
POWER MOS 7 IGBT | |
10 | APT35GP120J |
Advanced Power Technology |
POWER MOS 7 IGBT | |
11 | APT35GP120JDQ2 |
Advanced Power Technology |
POWER MOS 7 IGBT | |
12 | APT35GT120JU2 |
Microsemi Corporation |
ISOTOP Buck chopper Trench IGBT | |
13 | APT35GT120JU3 |
Advanced Power Technology |
ISOTOP Buck chopper Trench IGBT | |
14 | APT35GT120JU3 |
Microsemi Corporation |
ISOTOP Buck chopper Trench IGBT | |
15 | APT35DL120HJ |
Microsemi Corporation |
Power Module - Diode |