AP9930GM |
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| Part Number | AP9930GM |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universall... |
| Features |
4.4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -30 ±25 -4.1 -3.3 -20
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200923043
AP9930GM
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.04 5.2 7 2 4 7 ... |
| Document |
 AP9930GM Data Sheet
PDF 132.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Advanced Power Electronics |
Power MOSFET |
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Advanced Power Electronics |
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
POWER MOSFET |
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Advanced Power Electronics |
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
POWER MOSFET |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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