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AP9918H |
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| Part Number | AP9918H |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S... |
| Features |
ient Max. Max. Value 2.6 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200227032
AP9918H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125
Max. Units 14 28 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A VGS=2.5V, ID=9A
www.DataSheet4U.... |
| Document |
 AP9918H Data Sheet
PDF 118.95KB |
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