AP9564GM Datasheet

AP9564GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage app.

Features

erating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 201004041 AP9564GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 13 27 6 14 14 8 46 17 300 250 Max. Units 28 40 -3 -1 -25 ±100 43 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA R.