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AP9563GK |
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| Part Number | AP9563GK |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=... |
| Features |
ithout notice
200914051-1/4
AP9563GK
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -40 -1 -
Typ. -0.03 10 20 4 10 12 6 70 36 240 185 5.8
Max. Units 40 60 -3 -1 -25 ±100 30 8.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
www.DataSheet4U.com
Static Drain-Source On-Resistance
VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crs... |
| Document |
 AP9563GK Data Sheet
PDF 108.45KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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