AP9563GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9563GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Rat.

Features

Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200227041 AP9563GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 18 19 4 9 10 37 52 80 230 180 Max. Units 40 60 -3 -1 -25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.