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2N2647 |
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| Part Number | 2N2647 |
| Manufacturer | Comset |
| Description | 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much hi... |
| Features |
n Storage Temperature Range
2N2646
30 30 50 2 300
2N2647
V V mA A mW
150 -55 to +175 °C
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
IEO V(BR)B1E
Ratings
Emitter Reverse Current Base 1 – Emitter Breakdown Voltage IE =100 µA 2N2646 – 2N2647 Min Max 12 µA V 1/2 30 COMSET SEMICONDUCTORS 2N2646 2N2647 2N2646 – 2N2647 Symbol RBBO Ratings Interbase Resistance VB1B2 = 3 V Intrinsic stand-off ratio VB1B2 = 10 V Emitter Saturation Voltage IE = 50 mA, VB1B2 = 10 V Valley Current VB1B2 = 20 V Peak Current VB1B2 = 25 V 2N2646 2N2647 2N2646 2N2647 2N2646 2N2647 ... |
| Document |
 2N2647 Data Sheet
PDF 87.20KB |
| Distributor | Stock | Price | Buy |
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