TAN300 Datasheet

TAN300 Pulsed

The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. L.

Features

Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 50 Volts PW = 10 µsec DF = 10% F = 1090 MHz Ie = 25 mA Ic = 50 mA Ic = 1A, Vce = 5 V MIN 300 60 6.6 45 10:1 2.0 65 10 .15 Volts Volts o TYP MAX UNITS Watts Watts dB % θjc2 C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial Issue June, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APP.