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IPP06CNE8NG |
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| Part Number | IPP06CNE8NG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 6.2 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Package Marking PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PG-TO220-3 06CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ... |
| Document |
 IPP06CNE8NG Data Sheet
PDF 495.63KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Infineon Technologies |
Power-Transistor |
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Infineon Technologies |
Power-Transistor |
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INCHANGE |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Infineon |
Power-Transistor |
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Infineon |
Power-Transistor |
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Infineon |
Power-Transistor |
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INCHANGE |
N-Channel MOSFET |
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Infineon Technologies |
Power-Transistor |
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Infineon Technologies |
Power-Transistor |
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