MT45W4MW16B |
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Part Number | MT45W4MW16B |
Manufacturer | MicrON Semiconductor (https://www.onsemi.com/) |
Description | , and Figure 40 on page 50 for 54-ball mechanical drawing. Options (continued) • Configuration: 4 Meg x 16 2 Meg x 16 • Package 54-ball FBGA • Operating Temperature Range Wireless (-25°C to +85°C) Ind... |
Features |
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V –1.95V VCC 1.70V –2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst READ: (39ns [4 clocks] @ 1... |
Datasheet |
MT45W4MW16B Data Sheet
PDF 792.56KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Micron Semiconductor |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|
|
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|
|
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Micron Semiconductor |
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory |
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Micron Semiconductor |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
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Micron Technology |
8MEG X 16 Async/Page/Burst CellularRAM Memory |
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