OP770B NPN Photo transistor

OP770B NPN Photo transistor

The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. The device’s wide receiving angle provi.

Features

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• Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.6 mm).