2SB674 Datasheet

2SB674 Silicon PNP Transistor

: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Co.

Features

• High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A)
• Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A)
• Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 2SB673 2SB674 2SB675 2SB673 2SB674 2SB675 SYMBOL v CBO VcEO VEBO ic IB RATING -100 -80 -60 -100 -80 -60 -5 -7 -0.2 UNIT V V V A A Collector Power Dissipation PC (Tc=25°C) 40 W Junction Temperature T1 150 °C Storage Tempe.