V54C3256404VE (V54C3xxxx4VE) 64Mbit SDRAM

V54C3256404VE (V54C3xxxx4VE) 64Mbit SDRAM

The V54C365(16/80/40)4VE is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16, 4 banks x 2Mbit x 8, or 4 banks x 4Mbit x 4. The V54C365(16/80/40)4VE achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes.

Features

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■ 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 3 Programmable Wrap Sequence: Sequential or Interleave Programmable Burst Length: 1, 2, 4, 8, and full page for Sequential Type 1, 2, 4, 8 for Interleave Type Multiple Burst Read with Single Write Operation Automatic and Controll.