IRF620 |
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| Part Number | IRF620 |
| Manufacturer | TRANSYS Electronics |
| Description | www.DataSheet4U.com IRF620 Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D G S N Channel Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Symbol Parameter Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current ... |
| Features |
=5.2A, Tp = 300µS VDD = 100VDC, ID = 4.8A, RG = 18 RD = 20 VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ ID = 4.8A VDS = 160VDC, VGS = 10VDC
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nC nC nC pF pF pF nS nS nS nS A A V
5.2 18 1.8
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MAXIMUM RATINGS Parameter
Gate to Source Voltage Drain to Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissapation Thermal Resistance (Junction to Ambient)
(Tj = 25 C unless stated otherwise) Symbol Condition VGS VDSS ID IDM PD RTH (J-A) (TA = 25 C) Value +/- 20V 200 5.2 18 50 62 Unit Volt Volt Amp Amp W C/W
Maximum Operating Temperature Range (Tj) -55 to +150 OC Maximum Storage Te... |
| Datasheet |
 IRF620 Data Sheet
PDF 169.12KB |
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