IHW30N120R Datasheet

IHW30N120R IGBT

www.DataSheet4U.com IHW30N120R Soft Switching Series q C IGBT with monolithic body diode for soft switching Applications Features: • Powerful monolithic Body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution .

Features

• Powerful monolithic Body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI 1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant Applications:
• Inductive Cooking
• Soft Switching Applications Type IHW30N120R VCE 1200V IC 30A VCE(sat),Tj=25°C 1.55V Tj,max 175°C Marking H30R120 Package PG-TO-247-3-.