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Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, Oberfläche aufgerauht. Infrared emitting die, top side cathode connection, surface frosted 2003-04-11 1 www.DataSheet4U.com F 1047.
• Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.
• Chipsize: 300 x 300 µm²
• Very highly efficient GaAlAs LED
• High reliability
• High pulse handling capability
• Good spectral match to silicon photodetectors
• Frontside metallization: aluminum Backside metallization: gold alloy
• Delivery: diced on foil Applications
• IR remote control for hifi and TV sets, video tape recorder, dimmers
• Remote control for steady and varying intensity
• Light-reflection switches (max. 500 kHz)
• Sensor technology
• Discrete optocouplers
Typ Type F 1047A F 1047B
Bestellnummer Ordering Code Q67.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | F1047B |
Osram Opto Semiconductors |
Infrared Emitting Diode Chip |
|
| 2 | F1040 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 3 | F1000LC120 |
IXYS |
Extra Fast Recovery Diode |
|
| 4 | F1001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 5 | F100122 |
National Semiconductor |
9-BIT BUFFER |
|
| 6 | F100124 |
National Semiconductor |
Hex TTL-to-ECL Translator |
|
| 7 | F100125 |
National Semiconductor |
Hex ECL-to-TTL Translator |
|
| 8 | F100136 |
National Semiconductor |
4-Stage Counter / Shift Register |
|
| 9 | F100164 |
Fairchild Semiconductor |
16 Input Multiplexer |
|
| 10 | F100164 |
National Semiconductor |
16 Input Multiplexer |
|
| 11 | F100180 |
National Semiconductor |
HIGH-SPEED 6-BIT ADDER |
|
| 12 | F100183 |
National Semiconductor |
2 X 8-BIT RECODE MULTIPLIER |
|
| 13 | F1001C |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 14 | F1002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 15 | F1003 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
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