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H5N3007CF |
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| Part Number | H5N3007CF |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | www.DataSheet4U.com H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Bu... |
| Features |
• • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(puls... |
| Document |
 H5N3007CF Data Sheet
PDF 111.09KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Renesas Technology |
N-Channel MOSFET |
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Renesas Technology |
N-Channel MOSFET |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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INCHANGE |
N-Channel MOSFET |
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Renesas Technology |
N-Channel MOSFET |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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