DMJxxxx Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

DMJxxxx Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

Alpha beam–lead and chip Schottky barrier mixer diodes are designed for applications through 40 GHz in Ka–band. The beam–lead design eliminates the problem of bonding to the very small junction area that is characteristic of the low capacitance involved in microwave devices. Beam–lead Schottky barri.

Features

Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam
  –lead and chip Schottky barrier mixer diodes are designed for applications through 40 GHz in Ka
  –band. The beam
  –lead design eliminates the problem of bonding to the very small junction area that is characteristic of the low capacitance involved in microwave devices. Beam
  –lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of m.