AP9T16GH |
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Part Number | AP9T16GH |
Manufacturer | Advanced Power Electronics |
Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S... |
Features |
istance Junction-ambient Max. Max. Value 5 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200908052-1/4
www.DataSheet4U.com
AP9T16GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.01 19 10 3 5 10 98 18 6 870 160 120 1.38 Max. Units 25 40 1.5 1 25 ±100 16 1390 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coeff... |
Datasheet |
AP9T16GH Data Sheet
PDF 140.90KB |
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