CTZ9.1 (CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

CTZ9.1 (CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3mS TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=.

Features

These Zeners Are Best Suited For Industrial Purpose , Military & Space applications. Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3mS TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=200mA UNIT mW W ºC ºC V.