LNA2W01L GaAs Infrared Light Emitting Diode

LNA2W01L GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950.

Features

High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Narrow directivity : θ = 18 deg. (typ.) Ultra-miniature double ended package 2.8±0.2 R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage tem.