G152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET

G152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H.

Features

Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Oper.