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LN78 GaAlAs Infrared Light Emitting Diode

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LN78 GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control cystems ø2.4 2.9±0.25 4.5±0.3 3.9±0.3 Features High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 12.8 min. 2.8 2.4 2-1.2±0.3 Not solder.

Features

High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 12.8 min. 2.8 2.4 2-1.2±0.3 Not soldered 1.2 0.9 1.7±0.2 0.8 1.5 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * R0.6 Symbol PD IF IFP * Ratings 180 100 1 3
  –25 to+85
  –30 to +100 Unit mW mA A V ˚C ˚C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Pa.

LN78 LN78 LN78
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