Document | DataSheet (222.16KB) |
The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. Features *Simple Drive Requirement *Lower Gate Charge *Fast Switching P.
*Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating .
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No. | Part # | Manufacture | Description | Datasheet |
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1 | GJ90T03 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GJ9563 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GJ9575 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | GJ9585 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | GJ965 |
GTM |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | GJ9912 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | GJ9915 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | GJ9916 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | GJ9960 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | GJ9962 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | GJ9971 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | GJ9973 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
13 | GJ9980 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
14 | GJ9T15 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
15 | GJ9T16 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |