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NE856M02

Part Number	NE856M02
Manufacturer	CEL
Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Published	Jul 28, 2007
Datasheet	NE856M02 PDF File

Features

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• HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz

NE856M02

OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BO...

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