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LP3000SOT89 |
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| Part Number | LP3000SOT89 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000... |
| Features |
♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1.3 dB Noise Figure ♦ 46 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimize... |
| Document |
 LP3000SOT89 Data Sheet
PDF 44.16KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Filtronic Compound Semiconductors |
2W Power PHEMT |
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Filtronic Compound Semiconductors |
PACKAGED 2W POWER PHEMT |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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Superworld Electronics |
POWER TRANSFORMER |
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