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NE678M04

Part Number	NE678M04
Manufacturer	CEL
Description	NPN SILICON RF TRANSISTOR
Features	• Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3...
Published	Apr 24, 2007
Datasheet	NE678M04 PDF File

Features

• Ideal for medium output power amplification 
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm 
• HFT3 technology (fT = 12 GHz) adopted 
• High reliability through use of gold electrodes 
• Flat-lead 4-pin thin-type super minimold pac...

Similar Datasheet

NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR - NEC
NE678M04 NPN SILICON RF TRANSISTOR - CEL

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