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TIP112

Part Number	TIP112
Manufacturer	UTC
Description	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Published	Apr 15, 2007
Datasheet	TIP112 PDF File

Features

* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use

EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

B

C

E

TO-220

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collecto...

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