Part Number | RD12MVP1 |
Manufacturer | Mitsubishi Electric |
Title | Silicon MOSFET Power Transistor |
Description | RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications... |
Features | •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX ... |
Published | Feb 15, 2007 |
Datasheet | RD12MVP1 PDF File |