DatasheetsPDF.com

RD12MVP1

Mitsubishi Electric
Part Number RD12MVP1
Manufacturer Mitsubishi Electric
Title Silicon MOSFET Power Transistor
Description RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications...
Features •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX ...
Published Feb 15, 2007
Datasheet PDF File RD12MVP1 PDF File


RD12MVP1
RD12MVP1


Features

•High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [outpu...



Similar Datasheet


INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)