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EN27C512 |
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| Part Number | EN27C512 |
| Manufacturer | EON |
| Description | The EN27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM). Organized into 64K words with 8 bits per word, it features QuikRiteTM singleaddress location programm... |
| Features |
• Fast Read Access Time : -45, -55, -70, and -90ns • Single 5V Power Supply • Programming Voltage +12.75V • QuikRiteTM Programming Algorithm • Typical programming time 20µs • Low Power CMOS Operation • 1µA Standby (Typical) • 30mA Operation (Max.) • CMOS- and TTL-Compatible I/O • High-Reliability CMOS Technology • Latch-Up Immunity to 100mA from -1V to VCC + 1V • Two-Line Control ( OE & CE ) • Standard Product Identification Code • JEDEC Standard Pinout • 28-pin PDIP • 32-pin PLCC • 28-pin TSOP (Type 1) • Commercial and Industrial Temperature Ranges GENERAL DESCRIPTION The EN27C512 is a low-p... |
| Document |
 EN27C512 Data Sheet
PDF 135.52KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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EON |
1Megabit EPROM |
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Fuji Electric |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
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Fuji Electric |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
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Fuji Electric |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
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Fuji Electric |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
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Fuji Electric |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
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EON |
3.3V NAND Flash Memory |
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EON |
3.3V NAND Flash Memory |
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EON |
3.3V NAND Flash Memory |
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EON |
3.3V NAND Flash Memory |
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